?2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
FFH30US30DN
Package Marking and Ordering Information
Electrical Characteristics (per leg) TC
= 25
°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
30US30DN FFH30US30DN TO-247 N/A 30
Symbol Parameter Test Conditions Min Typ Max Units
IR
Instantaneous Reverse Current VR
= 300V T
C
= 25
°C - - 100 μA
TC
= 125
°C--1mA
VF
Instantaneous Forward Voltage IF = 30A TC
= 25
°C - 0.93 1.0 V
TC
= 125
°C-0.80.87V
CJ
Junction Capacitance VR = 10V, IF
= 0A - 410 - pF
trr
Reverse Recovery Time IF
= 1A, dI
F/dt = 100A/μs, V
R
= 15V - 29 50 ns
IF
= 30A, dI
F/dt = 100A/μs, V
R
= 15V - 32 55 ns
trr
Reverse Recovery Time IF
= 30A,
Maximum Reverse Recovery Current - 5.3 - AdIF/dt = 200A/μs,
Reverse Recovered Charge - 140 - nCVR
= 195V, T
C
= 25
°C
-46-ns
IRM(REC)
QRR
trr
Reverse Recovery Time IF
= 30A,
S Softness Factor (tb/ta) - 0.45 - -dIF/dt = 200A/μs,
VR
=195V,
RM(REC)
Maximum Reverse Recovery Current - 9 - A
Q
TC
= 125
°C
RR
Reverse Recovered Charge - 400 - nC
-77-ns
I
trr
Reverse Recovery Time IF
= 30A,
S Softness Factor (tb/ta) - 0.49 - -dIF/dt = 1000A/μs,
VR
=195V,
RM(REC)
Maximum Reverse Recovery Current - 32 - A
Q
TC
= 125
°C
RR
Reverse Recovered Charge - 930 - nC
-54-ns
I
RθJC
Thermal Resistance Junction to Case TO-247 - - 0.65
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247 - - 30
°C/W
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相关PDF资料
FFP20UP20DNTU
DIODE PWR ULT FAST 200V TO-220
FFP30U60DNTU
DIODE ULT FAST 600V 30A TO-220
FFPF12UP20DNTU
DIODE PWR ULT FAST 200V TO-220F
FFPF20UA60DN
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FFPF20UP20DNTU
DIODE ULTRA FAST 200V TO-220F
FFPF20UP30DNTU
DIODE PWR ULT FAST 300V TO-220F
FFPF20UP60DNTU_G
DIODE 600V 10A TO-220FP
FFPF60SA60DSTU
DIODE STEALTH DUAL 600V TO-220F
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